| 摘要 |
PURPOSE:To contrive the realization of the semiconductor laser in a wavelength band of green by a method wherein the crystal ratio of a material and the structure made of II-VI group compound semiconductors and whose lattice constant is put in approximate matching in the interface of each layer are used for a substrate, the first clad layer, an active layer, and the second clad layer, respectively, in the titled device of double hereto junction structure. CONSTITUTION:ZnSe (EG=2.67eV) is used as the active layer 1. ZnTe1-x-ySexSy (x=0.30, y=0.44) is used as the first and second clad layers 3 and 4, and n type and p type conductivities are given to them, respectively. Using n type GaAs for the substrate 2, the first clad layer 3 is deposited immediately thereon to a thickness of 2-3mum; thereafter, the n or p type active layer 1 is deposited by 0.1-0.2mum, further the second clad layer 4 by 2mum, and a p type GaAs cap layer 5 approx. by 1mum. Besides, a p-side electrode 6 and an n-side electrode 7 to yield the laser oscillation due to current injection are provided. In this structure, the distribution of the lattice constant alpha0 in the direction along the layer thickness, band gap energy EG, and optical dielectric constant epsilon is as graphs shown by B, C, and D. Thus, the semiconductor laser whereby the light emission of a wavelength of gree can be obtained can be realized. |
