| 摘要 |
PURPOSE:To perform uniform patterning on a wafer with high precision by a method wherein light of the same wavelength with exposing light is projected to the wafer, and the exposing condition is measured from intensity of reflected light to control exposing intensity and time length required. CONSTITUTION:A light source 12 is lighted, the alignment marks of a wafer 3 and a reticle 2 are recognized 14 utilizing reflected light of the wafer 3, and an X-Y table 4 is driven to perform positioning. The reflected light intensity signal of a sensor 13 is inputted to a control part 16 at the same time, compared with stored informations, resist film thickness and reflectivity of the substrate are calculated 17, the most suitable exposing condition is calculated 18 from relation between data thereof and pattern size, and control of the amount of exposure 19 (opening time of a shutter 7, intensity of a light source 8) is performed. As a result, because the most suitable condition can be set at every alignment or exposure, respective pattern sizes can be controlled uniformly with high precision. |
