| 摘要 |
<p>A dynamic read-write random access memory is described having memory cells (211-214) each including switching means (Tt) and a capacitor (C) connected between one side of the switching means and a voltage supply line. A bit line (B, B) is connected to the other side of each switch means (Tt), and a word line (W1- W4) is connected to a control terminal of each switching means (Tt). When a first voltage level is applied to one of the word lines one memory cell is selected and when a second voltage level is applied that memory cell is not selected. A voltage supply circuit (241) applies to the bit line (B,'B), when the memory cell is not selected, a voltage level between the second voltage level applied to the word line (W, - W4) and a third voltage level at the junction of the switching means (Tt) and the eapacitor (C), to prevent flow of leakage current through the switch means (Tt) to the bit line.</p> |
