| 摘要 |
PURPOSE:To reduce a resulting step difference, by forming a collector electrode on a collector contact layer, by coating the side periphery of the electrode with an insulating film, and by stack-growing a semiconductor layer while using the insulator coated electrode as a mask. CONSTITUTION:On a semi-insulating substrate 1 are formed an n<+> type collector contact layer 2 on which a collector electrode 3 is selectively formed. After an SiO2 film 4 is grown over the entire surface, only that surrounding the side periphery of the electrode 3 is left and all other film 4 is removed. Next, on the layer 2 are grown an n type collector layer 5, a p type base layer 6, an n type layer 7 and an n type emitter layer 8 in this turn. After the layer 8 and the layer 7 are selectively etched to expose a portion of the layer 6 surface, an emitter electrode 9 and a base electrode 10 are formed. Alternatively, in this constitution the layer 2 and the layer 5 may be exchanged for the layer 8, where the electrode 3 becomes an emitter electrode. In this way, the step difference can be reduced as a whole, and there is no fear that the wiring may be disconnected. |
