| 摘要 |
PURPOSE:To improve short wavelength sensitivity and to obtain a solid-state image pickup element that forms satisfactory color picture by using a very thin poly-crystal slicone film for transparent electrode of a light receiving section and using a Si3N4 film on it, and utilizing multiple interference effect. CONSTITUTION:In a solid-state image pickup element having a light receiving section 4 having coated with transparent electrode of very thin poly-crystal silicone film on a base body 1 through an insulating film such as SiO2 etc., thickness d2 of the poly-crystal silicon film 3 of the light receiving part 4 is made less than 800Angstrom , and thickness d3 of the Si3N4 film 20 is made less than 1,500Angstrom to bring spectroscopic sensitivity of the poly-crystal silicon film 3 and Si3N4 film, accordingly peak value of spectroscopic sensitivity of the light receiving section 4 near objective short wavelength, that is, 450nm (wavelength of blue) by utilizing at least multiple interference effect produced together with the insulating film 2. As a range of film thickness d2 of the poly-crystal silicone film, it is made to 300Angstrom <=d2<=800Angstrom . Thickness d1 of the insulating film 2 under the poly-crystal silicone film 3, for instance, a SiO2 is made to a range of 1,000Angstrom <= d1<=3,000Angstrom . Thickness d3 of the Si3N4 film 20 is made less than 2,000Angstrom , preferably about 1,500Angstrom or about 500Angstrom .
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