HIGH-SPEED COMPLEMENTARY SEMICONDUCTOR INTEGRATED CIRCUIT,申请号EP19830302315-传众专利搜索

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发明名称	HIGH-SPEED COMPLEMENTARY SEMICONDUCTOR INTEGRATED CIRCUIT
摘要
申请公布号	EP0093557(A3)	申请公布日期	1985.09.11
申请号	EP19830302315	申请日期	1983.04.22
申请人	KABUSHIKI KAISHA TOSHIBA	发明人	NII, RIRO;TOYODA, NOBUYUKI;HOJO, AKIMICHI;YANAI, HISAYOSHI
分类号	H01L21/8238;H01L27/08;H01L27/092;H01L27/12;H01L29/24;H01L29/78;H01L29/786;(IPC1-7):H01L27/08	主分类号	H01L21/8238
代理机构		代理人
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