Transistor circuit for semiconductor device with hysteresis operation and manufacturing method therefor.

摘要

A transistor circuit with hysteresis operation, which is formed with a detector part (71, 72) and selector part (73, 74). The detector part (71, 72) detects a change in the level of an input signal (Vin) according to one of first and second threshold levels (V1, V2), and generates an output signal (Vout) having a level corresponding to the input signal (Vin). The level of the input signal (Vin) is changed between a first level (H) and a second level (L) which is lower than the first level (H). The first and second threshold levels (V1, V2) fall within a range defined between the first and second levels (H, L). The selector part (73, 74) selects one of the first and second threshold levels (V1, V2) in accordance with the level of the output signal (Vout), and applies the selected one threshold level (V1 or V2) to the detector part (71, 72).