| 摘要 |
PURPOSE:To obtain easily a uniform thin film of superior quality by a method wherein after ultraviolet rays are projected to a GaAs substrate in an atmosphere containing at least one side of oxygen and ozone, the semiconductor thin film is grown epitaxially on the substrate. CONSTITUTION:After a GaAs substrate is immersed for 15min in boiling Trichelene, rinsed by isopropyl alcohol, and washed for 10min by pure water. Then immersed for 5min in a mixed liquid of ammonia, a hydrogen peroxide liquid and pure water, and after washed for 10min by pure water, ultraviolet rays are projected thereto. At this time, projection of the ultraviolet rays is performed in an atmosphere containing at least one side of oxygen ane ozone. When the distance between the substrate and the light source is the degree of 10mm., intensity of projection is made to about 50mW, and projected for about 5min. After then, the desired semiconductor thin film is grown epitaxially on the substrate. Accordingly, electron mobility of the obtained growth layer becomes to about two times of the usual, and the operating speed of a device formed by using the film thereof is also enhanced by 25-40%. |
