| 摘要 |
PURPOSE:To form a device being free to lay out, on a crystallized semiconductor layer over an insulative substrate, by constituting so that a series of islands consists of those being parallel with the crystallization direction and those being at a proper angle against the direction. CONSTITUTION:Islands 1 (with a width of 40mum and a length of 100mum) and islands 1' (with a width of 100mum and a length of 40mum) of polysilicon and connecting stripes 2 (with a width of 10mum) are formed on a quartz substrate 3 being optically polished. After they are coated with an SiO2 film, they are melted and re-grown by moving a high-temperature area 5 with a temperature of 1,450 deg.C and a width of 1mm. at a speed of 0.5mm./sec in the direction as shown by the arrow 4. Next, the Si surrounding are and the connecting stripes 2 are dry- etched to form Si islands 7 of device areas. Thereafter, source and drain layers 8 are formed and electrodes 10 are deposited on connecting areas 9 to complete an FET. In this way, a semiconductor device being free to lay out is formed on a crystallized Si layer over an insulative substrate or an insulative film. |
