| 摘要 |
PURPOSE:To etch different etching patterns according to dry etching with favorable efficiency by a method wherein the pattern areas are calculated at photo mask pattern formation time, and the etching speeds of materials to be etched corresponding to respective photo masks are estimated from the result thereof to decide the conditions. CONSTITUTION:Etching patterns are designed to be formed using a computer, and at the same time, the whole areas of the patterns are calculated. Photo masks are formed conforming to the formed patterns, and photo resist masks 3 of the desired patterns are formed on a material 2 to be etched according to the usual method. When relation between the pattern area and film thickness of the material to be etched is already known, because the necessary etching hours can be decided, the condition is decided corresponding to the etching speed of the material to be etched estimated from the whole areas of the patterns calculated previously, and dry etching is performed. According to this construction, complicatedness to decide the etching condition by acquiring the etching speed according to an experimentation each time is eliminated even when etching patterns are different from each other, and manufacturing efficiency is enhanced. |
