| 摘要 |
PURPOSE:To obtain a crystal of superior quality introduced with the desired impurities when a semiconductor element is to be manufactured by a method wherein only a damage part and defects are removed without removing impurities implanted according to ion implantation. CONSTITUTION:A mask 2 is applied on an Si substrate 1, and an impurity ion implanted layer 3 is formed. At this time, impurities display distribution to be decided by the projection range, and the standard deviation depending on accelerating energy, and when accelerating energy is lowered, depth of the layer 3 and a damage introducing region are shallowed. Then solid phase growth 4 is made to be performed as not to make a defect to propagate according to diffusion of impurity atoms by selecting a low temperature and processing hours, and damage is restored. Then after an impurity diffusion layer 5 is formed sufficiently deep by performing a high temperature process, the layer 4 having remaining defects is etched to be removed, and when the maks 2 is removed and the substrate 1 is etched, a flat surface can be obtained, and the Si substrate of superior quality introduced with the desired impurities is completed. |
