| 摘要 |
PURPOSE:To prevent the mixing of source by a method wherein the plane face where a substrate holder comes in contact with the source to be used for formation of a substrate and the substrate upper surface will be brought almost in the same height, the interval between the substrate upper surface and the lower surface of a melt holder is made larger than the thickness of a thin film crystal and smaller than the thickness of the substrate. CONSTITUTION:The plane surface, on which a substrate holder 1 supporting a semiconductor substrate 2 comes in contact with the sources 4 and 5 to be used for substrate formation, and the upper surface of the semiconductor substrate 2 are brought almost in the same height, the interval between the upper surface of the semiconductor substrate 2 and the lower surface of a melt holder 1 is made larger than the thickness of a thin crystal to be grown, and it is made smaller than the thickness of the semiconductor substrate 2. As a result, the upper surface of the semiconductor substrate and the upper surface of the substrate holder are brought lalmost in the same height, and as a necessary and sufficient interval is maintained between the lower surface of the melt holder and the upper surface of the semiconductor substrate, the source to be used for growing does not remain on the substrate due to the difference of gas pressure when the melt holder is slided, and the mixture of said source can be prevented when a polycrystalline thin film is grown by contacting the source to be used for growing by having different composition to the semiconductor successively. |
