| 摘要 |
PURPOSE:To enable to remove the source for growing without damaging the thin film layer formed on a semiconductor substrate by a method wherein a plate-like material having the affinity with the source for growing equal to or higher than that of the semiconductor substrate is buried at the lower part of the partition of a melt holder supporting the source to be used for growth of the substrate. CONSTITUTION:A liquid-phse epitaxial growing device is constituted by burying a plate- like substance 6, having the affinity with the source growng equal to or higher than that of a semiconductor substrate, in the lower part of the partition of a melt holder 3 supporting the sources 4 and 5 to be used for growing of the substrate in such a manner that the lower end of the substrate 6 will be brought to the height almost same as that of tue lower surface of tue partition of the melt holder For example, one or a plurality of pieces of plate-like substrate 6 (plate of the material same as that of a semiconductor substrate) having a high affinity with the source to be used for formation is buried at the lower part of the partition (melt holder) which is used to isolate the source to be used for growing of a substrate, and a part of the source 4 for formation, which is left on the semiconductor substrate when the melt holder is slided, is removed in such a manner that said part is attracted to the substrate 6. |
