| 摘要 |
PURPOSE:To reduce parasitic resistance by forming a high-conductivity crystal layer on the surface of an operating layer, implanting compound-semiconductor constituent ions from the surface of the crystal layer so as to pass through the interface between the high-conductivity crystal layer and the operating layer of a substrate in quantity more than a specific quantity and thermally treating the ions. CONSTITUTION:Si ions are implanted selectively to a GaAs substrate 21 to form an operating layer region 22. A resist is removed, and a TiW film is applied and removed selectively to shape a gate electrode 23. An SiO2 film is formed on the whole surface, the surface of GaAs is exposed through anisotropic etching, and side walls 24 consisting of the SiO2 film are left at the ends of the gate electrode 23. A GaAs film 25 is grown on the whole surface, and Si is doped. As ions are implanted to the whole surface, and stepped sections in a resist film are smoothed. The resist on the gate electrode and the GaAs film and the resist left on a wafer are removed, and an SiO2 film 27 is applied as an inter-layer film. The whole is thermally treated, the SiO2 film and the resist are removed selectively and a Ti-Pt-Au film is shaped on the whole surface, and source and drain electrode wirings 28 are formed through patterning. |
