发明名称 |
Production of semiconductor structures with buried resistive or conductive regions by controlled ion bombardment and heat treatment |
摘要 |
The property of Group III-V compound materials, whereby ion bombarded material becomes highly resistive but recovers its original low resistivity by annealing at a temperature which is dopant and material dependant, is utilized to fabricate integrated circuits which include buried semiconductor interconnections or bus bars between devices.
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申请公布号 |
US4539743(A) |
申请公布日期 |
1985.09.10 |
申请号 |
US19830555506 |
申请日期 |
1983.11.28 |
申请人 |
AT&T BELL LABORATORIES |
发明人 |
ANTHONY, PHILIP J.;HARTMAN, ROBERT L.;KOSZI, LOUIS A.;SCHWARTZ, BERTRAM |
分类号 |
H01L21/265;H01L21/266;H01L21/324;H01L21/74;H01L21/76;H01L21/8252;H01L27/15;(IPC1-7):H01L21/263;H01L21/26 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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