| 摘要 |
PURPOSE:To produce the titled plate with sufficient contrast making patterning of X-ray absorbing layer feasible utilizing a conventional dryetching device. CONSTITUTION:After cleaning both side polished disc-type silicon single crystal wafer W, nitride silicon layers 1, 1' are respectively formed on the surface and backside by vacuumized CVD process to constitute a substrate. Next an X-ray absorbing layer 2 made of platinum silicide is immediately formed by means of sputtering process utilizing separated targets of platinum silicon. After the forming process of layer 2, a making original plate is produced by insufficient heat annealing process in N2 atmosphere. Resist 4 formed on the X-ray absorbing layer 2 is exposed and developed to produce stripe patterned resist 4. Finally the layer 2 is dry-etched by means of a reactive sputter etching device as one kind of conventional dry-etching devices. |
