| 摘要 |
PURPOSE:To reduce silicon residue on an insulating layer as much as possible, to prepare the surface of a device having excellent reliability and to fine a circuit and simplify a design by forming a metallic layer connected to a base material in double layer structure. CONSTITUTION:An SiO2 layer 11 is formed on an silicon substrate 10, and an electrode layer 12 consisting of aluminum, etc. as a base material is shaped. An insulating layer 13 composed of SiN, etc. and a metallic layer 14 consisting of aluminum, etc. are formed. The metallic layer 14 is etched so as to intrude under a resist layer 15 to shape a through-hole 14a. A through-hole 19 is formed through anisotropic plasma etching. A metallic layer 20 composed of a mixture of aluminum and silicon is shaped, and the metallic layers 14, 20 are etched by using a resist layer 21. There is hardly silicon included in the metallic layer 20, and reliability on the insulating layer 13 can be ensured. |
