| 摘要 |
PURPOSE:To reduce dispersion of film thickness distribution and electrophotographic characteristics by causing glow discharge between a cylindrical electrode installed in a reaction vessel and a substrate located in its inside and opposite to it and shorter in the longitudinal length than it. CONSTITUTION:Gaseous SiH4 is introduced into a vacuum reaction chamber 2 heated to 230 deg.C with a heater 6 in a flow rate of 300SCCM by opening a valve 10, and the inside pressure is controlled to 1.0Torr with an evacuation system 18. When current is allowed to supply from a power supply 11 to an electrode 9 so as to give a power of 200W, said gas is injected through an introduction part 7 from nozzles 8. As a result, free radicals, such as Si-H, Si-H2, and Si-H3 are formed by the corona discharge in the vacuum chamber 2, and an amorphous silicon layer of 18mum thickness is formed for about 3hr on the surfaces of a substrate drums 5A, 5B, and 5C. |
