| 摘要 |
PURPOSE:To obtain a small-sized semiconductor device having large capacitance by forming a second insulating layer electrically insulating a first conductive layer and a second conductive layer before the second conductive layer, which has the same composition as a substrate and is connected electrically to the substrate, is shaped on the first conductive layer. CONSTITUTION:An insulating layer 11 and a resist layer 12 are formed on an Si substrate 10 in succession, and an insulating layer 11 is shaped while using the selectively removed residual resist layer 12 as a mask. The resist layer 12 is peeled, a conductive layer 13 is formed, a resist layer 14 is shaped on the conductive layer 13, and the insulating layer 11 and the conductive layer 13 are removed selectively. An insulating layer 15 consisting of the same composition as the insulating layer 11 is formed, and the insulating layer 15 is removed while leaving the side such as the right side surface side of the conductive layer 13 and a section such as the upper right half section of the conductive layer 13. A semiconductor crystal layer 16 having the same composition as the Si substrate 10 is grown extending over the whole surface of the insulating layer 15 in an epitaxial manner. |
