| 摘要 |
PURPOSE:To make a semiconductor element and a package bond together without deleriorating the element by a method wherein a laminated metal layer comprising an intermediate layer of Au and a surface layer of low melting point metal is utilized. CONSTITUTION:A laminated metal pellet 1 for bonding is composed of the thickest intermediate layer of Au and both side surface layers 3, 4 of low melting point metal such as Sn, etc. When the pellet 1 is heated from both sides i.e. an element 5 and a package 6 to be loaded, an alloy is made from melted Sn and Au contained in a lower electrode 9 of the element 5 and the intermediate layer 2 of pellet 1 likewise melted Au and Sn contained in a surface gold film 7 of the package 6 and the intermediate layer 2 to make upper and lower Au bond together. The element 5 and the package 6 may bond together at the temperature a little over the melting point of Sn remarkably reducing the deterioration of semiconductor element due to the heat generated at bonding. In, Ge may be utilized as the low melting point metal. |
