| 摘要 |
PURPOSE:To increase the speed of an element, and to reduce power consumption by forming a diffusion layer to a section previously etched up to predetermined depth with the exception of a channel region in an insular semiconductor layer so as to reach to an insulating substrate and forming a metallic compound layer on the surface of the diffusion layer. CONSTITUTION:Insular P<-> type and N<-> type single crystal Si 22a, 22b, oxide films 23, 24a, 24b, SiO2 films 26a, 26b and gate electrodes 27a, 27b are formed on a sapphire substrate 21. The oxide film 23 is removed selectively, and gate oxide films 23a, 23b are formed. The single crystal Si layer 22 is etched up to predetermined depth, and As and B are each implanted selectively to the P<-> type and N<-> type single crystal Si layers 22a, 22b and activated to shape P<+> type and N<+> type source and drain regions 32, 33 and 34, 35. A Mo layer 36 is formed on the whole surface, and silicide layers 37 are shaped on the surfaces of the source and drain regions 32-35 through heat treatment. The Mo layer 36 is removed, an SiO2 film 38 is deposited, contact holes are shaped, and Al electrodes 40a-40c are formed. |
