| 摘要 |
PURPOSE:To improve the degree of integration by each forming a plurality of transfer electrodes on each channel region formed by isolating a buried channel layer by a channel isolation region through a gate insulating film. CONSTITUTION:A buried channel layer 32 consisting of an impurity region having a conductive type reverse to a substrate 31 is formed to one part of the surface of the substrate 31, and the channel layer 32 is isolated into first and second channel regions 321, 322 composed of one conduction type impurity regions. First and second transfer electrodes 341, 342 are shaped where corresponding to the first and second channel layers 321. 322 through a gate insulating film 33. The width of the transfer electrodes is formed toward the reverse side of a channel isolation region 30 in size wider than the width W2 of the channel regions by size (a) so that the potential of the channel regions is controlled completely. Said constitution is equal to one in which two charge transfer devices are juxtaposed, and the mutual space of the channel regions is made smaller than conventional devices. |
