发明名称 LEAD MATERIAL FOR SEMICONDUCTOR
摘要 PURPOSE:To improve stamping capability by making a specific quantity of Pb contain in a Cu alloy including Fe and P. CONSTITUTION:0.001-0.010wt% Pb is included in a lead material for a semiconductor having a composition consisting of 0.05-0.25wt% Fe, 0.015-0.070wt% P, Cu and unavoidable impurity residue. Accordingly, no heat dissipating properties, plating properties, conductivity, heat-resistant softening properties and repeated flexing-resisting properties is damaged, and stamping capability can be improved. When the content of Pb exceeds 0.001%, plating properties and repeated flexing- resisting properties are deteriorated because the quantity of Pb precipitating on grain boundaries in an alloy composition and in grains is increased.
申请公布号 JPS60176258(A) 申请公布日期 1985.09.10
申请号 JP19840031959 申请日期 1984.02.22
申请人 TAMAGAWA KIKAI KINZOKU KK 发明人 FUTATSUKA RENSEI;CHIBA SHIYUNICHI;SAKAKIBARA TADAO
分类号 C22C9/00;H01L23/48;H01L23/495 主分类号 C22C9/00
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