| 摘要 |
Methods and circuitry for the controlled switching of non-regenerative power semiconductors to provide for a less rapid rate-of-change of load current while the power semiconductor is in its active region, thereby reducing electromagnetic interference. Methods and circuitry for the controlled turn-on with fast turn-off, controlled turn-off with fast turn-on or controlled turn-on and controlled turn-off of voltage-controlled and current-controlled semiconductors, with either load voltage (dV/dt) or load current (dI/dt) feedback are described.
|
