发明名称 Plasma vapor deposition film forming apparatus
摘要 In a vapor deposition film forming apparatus having a plurality of reactors each having a substrate and an electrode oppositely arranged in a vacuum chamber and means for applying a voltage thereacross to react or decompose reaction gas introduced into the vacuum chamber, the reactors are arranged on the circumference of a circle and exhaust pipes having substantially equal exhaust resistance radially extend to the reactors from a common exhaust pipe located at the center of the circle.
申请公布号 US4539934(A) 申请公布日期 1985.09.10
申请号 US19840647607 申请日期 1984.09.06
申请人 CANON KABUSHIKI KAISHA 发明人 FUJIYAMA, YASUTOMO;OKABE, SHOTARO
分类号 C23C16/50;C23C16/44;C23C16/505;G03G5/08;G03G5/082;H01J37/18;H01L21/205;H01L31/0248;(IPC1-7):C23C13/08 主分类号 C23C16/50
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