发明名称 |
Plasma vapor deposition film forming apparatus |
摘要 |
In a vapor deposition film forming apparatus having a plurality of reactors each having a substrate and an electrode oppositely arranged in a vacuum chamber and means for applying a voltage thereacross to react or decompose reaction gas introduced into the vacuum chamber, the reactors are arranged on the circumference of a circle and exhaust pipes having substantially equal exhaust resistance radially extend to the reactors from a common exhaust pipe located at the center of the circle.
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申请公布号 |
US4539934(A) |
申请公布日期 |
1985.09.10 |
申请号 |
US19840647607 |
申请日期 |
1984.09.06 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
FUJIYAMA, YASUTOMO;OKABE, SHOTARO |
分类号 |
C23C16/50;C23C16/44;C23C16/505;G03G5/08;G03G5/082;H01J37/18;H01L21/205;H01L31/0248;(IPC1-7):C23C13/08 |
主分类号 |
C23C16/50 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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