FORMATION OF BORON NITRIDE FILM

摘要

PURPOSE:To form easily and quickly a BN film as a B diffusion source having excellent quality on a silicon single crystal substrate by decomposing thermally borazine or the deriv. thereof. CONSTITUTION:The inside of a quartz tube 1 is evacuated to a vacuum and thereafter the silicon single crystal substrate 5 disposed therein is heated by a heater 2 to about 300-1,000 deg.C. While gaseous N2 or NH3 is passed through the tube from a cylinder 7, the borazine or borazine deriv. such as borazine trichloride or methyl borazine dichloride in an ampoule 4 is heated and evaporated by a heater 3 and is introduced into the tube. The above-mentioned borazine or the deriv. Thereof is thereby thermally decomposed on the substrate 5 to grow the BN film on the substrate 5. A voltage is preferably impressed to an electrode 6 to accelerate the formation of the film. The BN film having the excellent stability and uniformity in the microscopic compsn. and particle size is thus obtd.