发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To prevent a disconnection and a constrictuion of wiring patterns at the step difference parts of contact holes from happening by a method wherein contact holes formed on an insulating film are filled with a wiring a material to flatten the surface of contact holes and then wiring patterns connecting to the wiring material are formed on the insulating film. CONSTITUTION:Overall surface coated with a sensitive resin 28 evaporates aluminium 30. At this time, contact holes are coated with aluminium 30 to fill themselves with the aluminium 30. Next when this structure is immersed in acetone solution to be oscillated by supersonic wave, all of the aluminium 30 other than those in the contact holes 29 is removed leaving the aliminium 30 in the contact holes 29 only. The surface of a PSG film 27 is flattened by the alumium 30 buried in the contact holes 29. Later overall surface may evaporate aluminium 30 again to be patterned forming aluminium patterns 31 connected to the aluminium 30 on the PSG film 27.
申请公布号 JPS60176230(A) 申请公布日期 1985.09.10
申请号 JP19840030305 申请日期 1984.02.22
申请人 OKI DENKI KOGYO KK;MIYAZAKI OKI DENKI KK 发明人 YOSHITOME SHIYOUGO
分类号 H01L21/3205;H01L21/28 主分类号 H01L21/3205
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