| 摘要 |
PURPOSE:To prevent an IC chip from causing a defective exfoliation by a method wherein a silicon oxide film is formed on the backside of an IC chip to be bonded on a vessel through the intermediary of highly heat resistant resin. CONSTITUTION:A highly adhesive silicon oxide film 25 well adaptable to a highly heat resistant resin 22 is provided on the backside of an IC chip 23 to be bonded to a substrate 21 through the intermediary of said resin 22. A silicon oxide film formed in the diffusion process to produce an IC may be utilized for said silicon oxide film 25. |
