| 摘要 |
<p>PURPOSE:To form a superior sense circuit requiring no reference voltage generator circuit, and with a high sensitivity and low power consumption by using a depression MOSFET and by fixing a precharge level of a bit line at an absolute value of an FET threshold value voltage. CONSTITUTION:By using an inverter 14 as a sense amplifier and connecting across input/output terminals of this inverter 14 in precharge period, an optimum acting point is specified and the sense circuit is constituted so that an output change in the inverter 14 is positively fedback to its input after the precharge. Since the acting point of the inverter 14 is synchronized with precharge signals phi and -phi and automatically set, the circuit is made almost free from production process variance and influence in voltage fluctuation along with its high rating and high sensitivity. The MOSFETQ10 and Q11 work as a level shifter and an electric potential of a bit line BL is always precharged only to ¦VTHD¦, thereby obtaining high reliability.</p> |
