发明名称 NONVOLATILE SEMICONDUCTOR STORAGE DEVICE
摘要 <p>PURPOSE:To shorten a programming time by raising a comparative electric potential at the time of writing without operating outside. CONSTITUTION:When a reading time, or a writing voltage Vp is not impressed, an output electric potential of a circuit 14 is set at an intermediate electric potential between a main unit's a ''0'' level potential of main unit and a ''1'' level potential. While at the time of writing, when the writing voltage Vp is impressed, a transistor C11 is conducted and the output potential of the circuit 14 is higher than output potential at the time of reading, by which power source potential Vc is raised and effects can be obtained the same as several writing pulses given from a point that writing is completed, thereby shortening a programing time.</p>
申请公布号 JPS60175299(A) 申请公布日期 1985.09.09
申请号 JP19840030757 申请日期 1984.02.21
申请人 TOSHIBA KK;TOUSHIBA MAIKON ENGINEERING KK 发明人 IWAHASHI HIROSHI;ASANO MASAMICHI;MINAGAWA EISHIN
分类号 G11C17/00;G11C16/02;G11C16/06;G11C16/28;(IPC1-7):G11C17/00 主分类号 G11C17/00
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