| 摘要 |
PURPOSE:To flatten between an element region and a separating region by epitaxially growing a silicon after forming the element separating region. CONSTITUTION:After a silicon dioxide film 9 is grown on an insulator substrate 1, with a photoresist pattern 10 as a mask the film 9 is selectively etched, and an element separating region is formed. Then, a silicon 2 is epitaxially grown on the portion exposed with the substrate until becoming the same thickness as the film 9, thereby forming an element region. Thus, a step between the element region and the separating region is eliminated to perform the complete flattening. |
