| 摘要 |
PURPOSE:To closely contacting fixedly a substrate with a molecular beam epitaxial substrate holder without contaminating the surface even if it is heated to the growing temperature of approx. 800 deg.C by providing a block having a recess at the substrate mounting position of the holder. CONSTITUTION:A substrate 1 is secured to a recess formed on a substrate holder 3, and a spring 4 is composed of a cobalt-base alloy to contact the substrate 1 without attenuating elasticity to the molecular beam epitaxial growing temperature. Since indium is not used when the substrate 1 is accordingly secured to the holder 3, the indium becomes an oxide during molecular beam epitaxial growing, thereby preventing the surface of the substrate 1 from contaminating. |
