| 摘要 |
PURPOSE:To reduce a base resistance without loss of the crystal of a silicon by shortening a distance from the end of an emitter region to a polycrystalline silicon layer for a base electrode within 1mum. CONSTITUTION:A low impurity density N type epitaxial layer 2 is grown on a high impurity density N type silicon substrate 1 to become a collector region. Then, a silicon oxide film 10 is formed on the surface. Then, a polycrystalline silicon 11 is formed on the entire surface, and a boron ions are implanted thereinto. Thereafter, the boron impurity is diffused to form a base region 5, and the surface of the film 11 is converted into a silicon oxide film 12. Then, a polycrystalline silicon film 15 is formed on the entire surface, arsenic ions are implanted thereinto to form an emitter region 8. Subsequently, a contacting window for a metal electrode is formed on the film 11, and aluminum electrodes are formed on the portion and the film 15. |
