发明名称 |
SURFACE TREATMENT OF ALUMINUM SUBSTRATE FOR FORMING THIN FILM |
摘要 |
PURPOSE:To form a favorable thin film free from surface defects by dry-etching the surface of an Al substrate to remove an oxide hydrate film and to make the surface clean and dry and by heating the Al substrate in an atmosphere contg. oxygen while preventing contact with the air contg. moisture. CONSTITUTION:The surface of an Al substrate is dry-etched by discharge cleaning, reactive gas etching, plasma etching, reactive ion beam etching or other method to remove an oxide hydrate film and to make the surface clean and dry. The Al substrate is then heated in an atmosphere contg. oxygen while preventing contact with the air contg. moisture. An oxide film is formed on the surface of the Al substrate. |
申请公布号 |
JPS60174863(A) |
申请公布日期 |
1985.09.09 |
申请号 |
JP19840027839 |
申请日期 |
1984.02.15 |
申请人 |
SHIYOUWA ARUMINIUMU KK |
发明人 |
TSUKAMOTO KENJI;KATOU YUTAKA;ISOYAMA EIZOU;TANIMOTO SHIGEMI |
分类号 |
C23C8/12;C23C8/10;C23C14/02;C23C16/02;C23F4/00;G03G5/08;G03G5/10;G03G5/14;H01L21/316;(IPC1-7):C23C8/10 |
主分类号 |
C23C8/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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