| 摘要 |
PURPOSE:To suppress the short channel effect occurred by microminiaturization by providing a silicon nitride film on the side wall of a gate electrode, and performing an off-set gate structure under a self-aligning system. CONSTITUTION:A gate oxide film 2 and a field oxide film 3 are formed on the prescribed regions on the surface of a P type silicon substrate 1, a polycrystalline silicon layer is further formed, and a gate electrode 12 is formed. Then, the partial surface layer of the electrode 12 is oxidized, the film 13 is formed thereon, and a silicon nitride film 14 is then formed. Thereafter, the film 14 is entirely etched, with the electrode 12 and the film 14 as masks a source and drain region is formed by an ion implanting method or a thermal diffusion method. Eventually, an interlayer insulating film 15 is formed, and a silicon nitride film is formed on the side wall of the aluminum electrode, thereby performing an off- set gate structure of self-aligning system. |
