| 摘要 |
PURPOSE:To make the flow of a gate current excellent and to obtain excellent turn-ON and turn-OFF characteristics, by making the maximum resistance value part of a gate electrode in an inner line lower than the maximum resis tance value part of a gate electrode in an outer line. CONSTITUTION:The diameter of a semiconductor element 1 is about 30mm. The numbers of elements 111 on the first line, the second line and the third line are 48, 90 and 144, respectively. The ratios of the intervals of the elements of individual stages are 4.5:1 and 6:1 with respect to the interval 1 at the outermost line. By determining the interval for every element in this way, tade-off between a gate current and an emitter area can be improved. The ratio of the element intervals is determined by the divided numbers of the element in the first line, second line and third line.... Namely in consideration of the fact that the path of the gate current in the inner line of the emitter pattern conducts the gate current in the outer line having more elements than the inner line, the element interval in the inner line is made to be (a) and the interval in the outer line is made to be (b), which is smaller than (a). |
