| 摘要 |
PURPOSE:To obtain desirable humidity resistance while preventing the variation of characteristics caused by hot carriers during operation, by providing a passivation film having a layered construction in which an insulation film capable of absorbing hydrogen and a silicon nitride film formed by sputtering are layered in that order. CONSTITUTION:A passivation film has a layered construction in which a silicon oxide film 11 is deposited by the low-temperature plasma CVD process and an SiN film 12 is then deposited by sputtering. The silicon oxide film 11 is 5000 Angstrom thick is capable of absorbing hydrogen. The SiN film 12 is 7000 Angstrom thick. Since the sputtered SiN film 12 is employed instead of a plasma SiN film, no hydrogen is drawn in an MOSFET section during the formation of the passivation film in manufacture of an MOS semiconductor device. Any hydrogen emitted from a gate film 4 during the production of hot carriers is absorbed by the silicon oxide film 11, and therefore it can be prevented from rediffusing into the gate oxide film 4 to affect the characteristics of the MOSFET. |
