| 摘要 |
PURPOSE:To obtain the titled device excellent in pressure detection accuracy and in sensitivity by a method wherein pressure heating is carried out after a flux is removed by drying a thermosetting adhesive so applied as to form a thin layer on a semiconductor pressure sensitive element and at least one of the pedestal or stem. CONSTITUTION:Adhesive layers are formed on the lower end surface 8bB of a supporlting part 8b that is regarded as the junction surface of the semiconductor pressure sensitive element 8 and on the upper surface 6A regarded as the junction surface of the pedestal 6 by thin application of the adhesive 17. Next, the flux contained in the adhesive 17 is removed by drying the applied adhesive 17. Successively, the lower end surface 8bB of the supporting part 8b regarded as the junction surface of the element 8 and the upper surface 6A regarded as the junction surface of the pedestal 6 are subject to positioning in opposition to each other; thereafter, the adhesive 17s on the element 8 side is made to abut against the adhesive 17s on the pedestal 6 side, and the upper surface of the element 8 is pressed under a pressure P so as to press the element 8 to the pedestal 6, and is heated. |
