| 摘要 |
PURPOSE:To flatten the gap produced between the wiring material and the side wall or the buried wiring groove side wall of an insulation film and an interlayer connection hole by a method wherein the surface or the side wall of the wiring material formed by the lift-off method are partly covered with metallic films selectively. CONSTITUTION:The whole substrate is placed in a pressure reduction vapor phase growing device in order to fill a gap produced at the time of filling a contact hole formed on a substrate 1 with aluminum 4 by the lift-off method. Next, the substrate is kept at about 400 deg.C for about 60min by introducing hexafluoride tungsten gas and argon gas after exhaust; thereby, a tungsten film 5 deposits only on the side wall and the surface of the aluminum 4 in the contact hole. A wiring pattern is formed by coating the contact thus flattened over with aluminum 4'. Thereby, a high-reliability wiring without partial film wear or fining and the like in repetition of wirings can be obtained. |
