| 摘要 |
PURPOSE:To obtain the titled device of low oscillation threshold value by using a material where the substrate crystal is GaAs, ZnSe, or Ge; one clad layer is made of ZnSe of the first conductivity type, while the other clad layer is made of ZnSe of the second conductivity type or Cu (AlyGa1-y)Se2. CONSTITUTION:An active layer 14 is made of Cu(AlxGa1-x)Se2, being regarless of conductivity type. A carrier confinement and photo confinement layer (clad layer) 15 made of P type Cu(AlyGa1-y)Se2, where (x) and (y) satisfy a relation of 0<x<y<1, is provided on the active layer 14. A clad layer 16 of N type ZnSe is provided under the active layer 14. The structure made up of them is provided on the substrate 11, and the crystal of the substrate 11 is selected out of N type ZnSe, N type GaAs, or N type Ge. In any case, the laser diode structure excellent in lattice matching property can be obtained. The laser element is then obtained by providing electrodes 12 and 13 of N type and P type respectively on the above-mentioned structure. |
