| 摘要 |
PURPOSE:To measure the heat conductivity of a laminated insulating thin film by embedding conductors made of metal or a semiconductor which has a high fusion point and large variation in specific resistance with temperature in the insulating thin film in two upper and lower stages, and detecting variation in resistance with temperature. CONSTITUTION:An SiO2 film 21 is formed on a substrate 1 as the insulating film to be measured to thickness d2, and an Mo film 4 is formed thereupon and patterned. Further, an SiO2 film 22 is formed thereupon to thickness d1, and an Mo film 5 is formed on it and patterned. Temperature sensing parts 4a and 4b of the Mo films 4 and 5 are formed orthogonally. An SiO2 film 23 and then a polycrystalline Si layer 3 are formed on the Mo film 5. The temperature sensing parts 4a and 5a are irradiated with pulse laser light from above and resistance variations of the Mo films 4 and 5 due to temperature rises of the temperature sensing parts 4a and 5a are detected to calculate the heat conductivity of the laminated SiO2 insulating film 2. |
