| 摘要 |
PURPOSE:To shorten the manufacturing process of a semiconductor integrated circuit device as well as to reduce the areas needed for the element isolated regions by a method wherein the element isolated regions are formed by a self- alignment to the well regions and also are constituted of grooves in such a manner that the side parts of the isolated regions are surrounded with the grooves. CONSTITUTION:An insulating film 2 is formed on a semiconductor substrate 1, the insulating film 2 is selectively removed and after an insulating film 3 was formed on the removed part of the film 2, impurities 4 are selectively introduced therein. After an insulating film 5 was formed, the insulating film 5 is selectively removed and apertures 6 are provided. Furthermore, the insulating films 2 and 3 are selectively removed and apertures 7 are provided. The insulating film 5 is selectively removed and masks are formed by a self-alignment. Grooves 8 are formed in such a manner as to surround the side parts of a P type well region 9 using the masks. The impurities 4 are diffused and the P type well region 9 is formed. After the insulating films 2 and 3 are selectively removed, an insulator is buried in the grooves 8 and isolated regions are constituted. After this, a P-channel MISFET Qp and an N-channel MISFET Qn are formed using an ordinary method. |
