| 摘要 |
PURPOSE:To enable to enhance the S/N ratio of a semiconductor device by a method wherein the gate capacity of each driver MOS transistor of the inverter constituting the inversion circuit is set at more than specific times as much as an accumulating capacity for charge to be transferred and random noises to generate at the transferring time of charge are made to reduce by such the increasing of the gate capacity of each driver MOS transistor. CONSTITUTION:The gate capacity of each driver MOS transistor is set at more than 0.3 times as much as the capacity of each vertical signal conductor. For example, the channel width Ld of each driver MOS transistor 10 of the inverter constituting the inversion circuit is made longer than the channel length Wd of each load MOS transistor 10 of the inverter to raise the gain, and moreover, the gate capacity of each of the driver MOS transistors 20 is made equal to the capacity of each of the vertical signal conductors, thereby enabling to reduce the random noises. |
