| 摘要 |
<p>PURPOSE:To facilitate the line connection of the titled semiconductor device by a method wherein, in the semiconductor device of III-V group, an ohmic multilayer film and a wire bonding multilayer film are separated, they are overlapped on the prescribed region, and a coil bonding film only is coated on the region where a wire is attached. CONSTITUTION:After a P type clad layer 2, a P type active layer 3, an N type clad layer 4 and an N type GaAs layer 5 have been superposed on a P type GaAs substrate 1, a 150Angstrom thick Ni 11, a 400Angstrom thick Au.Ge 12, a 2,500Angstrom thick Au 13, a 200Angstrom thick Ti 14, a 100Angstrom thick Pt 15 and a 3,000Angstrom thick Au 16 are superposed, and ohmic electrode 21 for the GaAs substrate is composed of the Ni 11 and the Au.Ge 12, and a line connecting region and region 23 are superposed. According to this constitution, the coming up of the Pt 15 to the Au surface can be prevented in the line connecting region 24, and the line connection can be performed easily even when the temperature at the time of connection is raised to 450 deg.C or thereabout. Also, ohmic resistance is small in this constitution. Mo may be used instead of Pt.</p> |
