| 摘要 |
PURPOSE:To produce a semiconductor device with resistance value controllable in the status of a substrate by a method wherein an N<+> layer is formed on the part other than electrode leading parts at both ends of a P-layer formed on an N-layer surface of an Si substrate to provide measuring electrodes on both ends of the P-layer and the N-layer. CONSTITUTION:An N-epitaxial layer 3 is deposited on P type Si substrate wherein an N type layer 2 is buried and separated by a P-layer 4 to form another P-layer 5. Next an N<+> layer 6 and an N<+> collector leading layer 7 are formed and then openings 8-11 are made in an SiO2 film 15 to provided Al electrodes 12-14 in the openings 8-11 while measuring electrodes 17, 18 are respectively connected to the electrodes 13, 14 and a wiring 19 is finally provided. The P- layer 5 is a base layer and an anode of Zener diode. An equivalent circuit representing I (18) and H (17) respectively as negative and prositive is supplied with specific voltage for specific time. R10 represents the resistance between F (12) and G (19) after Zener element P4 is shortcircuited. The space between F-G provided with pinch resistance may be subject to specific resistance of kOMEGA/mm.<2> requiring less space for elements to secure high resistance. |
