| 摘要 |
PURPOSE:To simplify the process of a device with its emitter provided with series- resistor by a method wherein an N-layer on a P-type Si substrate is coated with poly Si and an N-type oxide layer is laminated before heattreatment while a poly Si resisting film is simultaneously formed on an electrode leading film and an insulating film. CONSTITUTION:An opening is made on an SiO2 film 5a on a P-base 5 and an N-emitter 7 on the surface of an Si substrate and then a poly Si11 and BSG13 are laminated thereon to be left selectively on the upper part of the opening. Firstly overall surface is laminated with the PSG13 to be heattreated for diffusing in the poly Si11 and then a P<+> layer 11a and an N<-> layer 11b are formed to be selectively etched for leaving respectively on corresponding electrode windows and then leaving an N-layer 11c on the SiO2 film 5a to form a thin P<+> layer 5c on a P-base 5 coming into contact with the P<+> layer 11a. Secondly overall surface is coated with Al to be photoetched forming a connecting layer 12c, a base electrode 12B, an emitter electorde 12E and a wiring pattern of the emitter 7 and the resistance layer 11c. In such a constitution, the reliability of a semiconductor device may be improved since the processes of oxidation, impurity introduction and photoetching are reduced to shorten the production process making electrode leading process easier. |
