| 摘要 |
PURPOSE:To contrive reduction in process of manufacture by a method wherein the second positive type resist pattern in formed without removing the first positive type resist pattern, thereby enabling to superpose a resist film. CONSTITUTION:A positive type resist mask 13 is provided on the SiO2 film 2 located on an Si substrate 1, windows Wt and Wd are provided, and the SiO2 film 2 of 1,000Angstrom in thickness is left at the bottom of the windows. The resist 13 is modified by performing a treatment in the air at 150-170 deg.C for approximately 20min in the state wherein the mask 13 is left, and the resist is made insoluble even when it is exposed and developed. Then, the second resist mask 15 is provided covering the window Wd, and the window Wd is opened. The masks 13 and 15 are removed by incinerating with O2 plasma, a polysilicon 6 is coated, an etching is performed by providing the third resist mask 7, and the polysilicon 6 is left on the window Wt only. The mask 7 is removed, and after the window Wd has been completed selectively, an Al electrode is attached. According to this constitution, a positive resist film can be superposed, the process of manufacture can be reduced, and the yield of production can also be improved. |
