| 摘要 |
PURPOSE:To carry out photo etching without warpage and obtain highly accurate electrode pattern by previously executing selective processing for semiconductor substrate or electrode film provided at the surface by the photo etching, placing a brazing material between the substrate and supporting member and integrating them by dissolution and coagulation. CONSTITUTION:An electrode pattern is formed previously by the photo etching before coupling of the supporting member which has been carried out usually in the preceding stage in order to reinforce a semiconductor substrate. Thereby, a good pattern accuracy can be obtained. Namely, the substrate of gate turn-off thyristor is formed with 4-layer structure of P-N-P-N and a recessed surface 14 which enters the lower P type layer is formed to the upper most N type layer when the supporting member 4 is not yet bonded. Thereafter, an Al electrode film 7 is deposited on the entire part including such recessed surface, a cathode electrode 3 is formed at the upper most layer by the photo etching and a gate electrode is formed in separation to the next layer in the same way. Next, the supporting member 4 is fixed to the rear surface of substrate using an Al material 5. |
