| 摘要 |
PURPOSE:To easily provide an element isolated region consisting of a U-groove type dielectric by a method wherein a U-shaped groove is provided without using an etching process. CONSTITUTION:A p<+> channel cut 12 is provided on a p type Si substrate, and an SiO2 film 13 is selectively coated thereon. An n<+> buried layer 14 and an n<-> layer 15 are epitaxially grown on the upper surface of the substrate 11. At this time, said epitaxial layers 14 and 15 are grown on the Si substrate 11 only, and a groove 16 is formed. Then, a wet etching is slightly performed on the exposed surface of the epitaxial layers, the defect located on the side face of the U- groove is removed, an SiO2 film 17 is coated thereon, and a polysilicon 18 is heavily coated by performing a CVD method. Said film 18 is removed by polishing down to the surface of the film 17, the surface of polysilicon which is filled in the groove 16 is oxidized, and a U-groove type element isolation region 19 is completed. |
