| 发明名称 |
Forming platinum contacts to in-based group III-V compound devices |
| 摘要 |
Electrical contacts with low specific-contact resistance to In-based Group III-V compound semiconductors (e.g., p-InGaAsP) are formed by electron beam depositing a thin Pt layer directly on the semiconductor and sintering at about 450 DEG -525 DEG C. for about 5-30 minutes. Light emitting diodes without dark spot defects can be fabricated using this technique.
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| 申请公布号 |
US4538342(A) |
申请公布日期 |
1985.09.03 |
| 申请号 |
US19840621082 |
申请日期 |
1984.06.15 |
| 申请人 |
AT&T BELL LABORATORIES |
发明人 |
CAMLIBEL, IRFAN;CHIN, ALAND K.;CHIN, BRYMER H.;ZIPFEL, CHRISTIE L. |
| 分类号 |
H01L21/28;H01L21/285;H01L29/43;H01L31/0224;H01L33/14;H01L33/30;H01L33/40;(IPC1-7):H01L21/285 |
主分类号 |
H01L21/28 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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